LaAlO3 (Lanthanum Aluminate)


    LaAlO3 single crystal has a lattice constant (a=3.790 Å) which fits high Tc superconductive material (such as YBCO: 3.86 Å) very well, proper dielectric constant and low dielectric loss in microwave band, so it is suitable for high Tc microwave electronic devices (for example high Tc superconductive filter in mobile communication). It is grown by Czechrolsky method, possible to get large size (2”and 3” in diameter) and high quality crystal and substrate. It is an important substrate that has been applied in communication industry.   

Boules and Finished Substrates

Crystalline Attributes:

Crystal structure Triclinic   3 m     Peroviskite
Cell parameter a=3.790Å    α=90˚5’    Pseudo-cubic
Melting point  2373°K
Density 6.52g/cm3
Specific Heat 0.427J/g·k298°K
Thermal conductivity 11.6W/m·k(300°K)
Thermal expansion 11.6x10-6k-1(940°K)
Dielectric constant (εr)

24(295°K)   23.7(80°K)   (18-35GHz)

Dielectric loss (tgδ)

6x10-6(80°K)  Microwave

Hardness (Mohs) 6.5
Growth Method Czokralski

Substrate Specifications:

Standard Size: Ф3″,Ф2″,Ф1″, 20x2010x1010x510x3mm or customer design.

Thickness: 0.5mm,1.0mm.

Thickness tolerance:±0.02mm or 0.005mm for special order;

Polish:   one or two sides

Orientation:<100> <110> <111

Orientation accuracy: ±0.5°

Edge Orientation accuracy: or 1°for special order

Cut with special tilt angle available(tilt angle:1°45°)

Micro roughness Ra≤5Å5μm×5μm


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